Tetrakis(ethylmethylamino)hafnium(IV) (TEMAH)

CAS Number: 352535-01-4

Molecular Formula: C12H32HfN4

About Tetrakis(ethylmethylamino)hafnium(IV) (TEMAH)

Driven by the continuous scaling of semiconductor process nodes and the surging demand for artificial intelligence and high-performance computing hardware, Tetrakis(ethylmethylamino)hafnium(IV) (TEMAH) remains a pivotal high-k precursor within the global atomic layer deposition (ALD) market. The B2B sourcing landscape ...

Synonyms

TEMAH
CTK4H4089
ethyl(methyl)azanide,hafnium(4+)
Tetrakis(ethylmethylamino) hafnium
Tetrakis(methylethylamino) hafnium

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Tetrakis(ethylmethylamino)hafnium(IV) (TEMAH) Specifications

CAS Number

352535-01-4

Molecular Formula

C12H32HfN4

Molecular Weight

410.90 g/mol

IUPAC Name

ethyl(methyl)azanide;hafnium(4+)

Canonical SMILES

CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C.[Hf+4]

InChI Key

NPEOKFBCHNGLJD-UHFFFAOYSA-N

InChI

InChI=1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

PubChem CID

4103752

EINECS Number

629-684-4

HSN No

29211999 / 28529090

CAS Number

352535-01-4

Molecular Formula

C12H32HfN4

Molecular Weight

410.90 g/mol

IUPAC Name

ethyl(methyl)azanide;hafnium(4+)

Canonical SMILES

CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C.[Hf+4]

InChI Key

NPEOKFBCHNGLJD-UHFFFAOYSA-N

InChI

InChI=1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

PubChem CID

4103752

EINECS Number

629-684-4

HSN No

29211999 / 28529090

Molecular Weight

410.90 g/mol

Hydrogen Bond Acceptor Count

Rotatable Bond Count

Exact Mass

412.20926 Da

Monoisotopic Mass

412.20926 Da

Topological Polar Surface Area

4 Å²

Melting Point (Experimental)

63 °C

Boiling Point (Experimental)

110 °C

GHS Hazard Statements

H225 (100%): Highly Flammable liquid and vapor H261 (75.2%): In contact with water releases flammable gas H302 (17.8%): Harmful if swallowed H311 (17.1%): Toxic in contact with skin H314 (25.6%): Causes severe skin burns and eye damage H315 (74.4%): Causes skin irritation H319 (74.4%): Causes serious eye irritation H331 (17.1%): Toxic if inhaled H335 (82.2%): May cause respiratory irritation

Hazard Classes and Categories

Flam. Liq. 2 (100%) Water-react. 2 (75.2%) Acute Tox. 4 (17.8%) Acute Tox. 3 (17.1%) Skin Corr. 1B (25.6%) Skin Irrit. 2 (74.4%) Eye Irrit. 2 (74.4%) STOT SE 3 (82.2%)

Electronics Industry

An organometallic precursor used in atomic layer deposition for depositing hafnium dioxide high-k dielectric thin films in advanced semiconductor devices

Semiconductor Manufacturing

A volatile chemical source utilized for engineering gate dielectrics and capacitor liners in dynamic random-access memory chips

Materials Science Research

A specialized metal-organic compound employed in the synthesis and fabrication of nanostructured hafnium-based materials

Nanotechnology

An efficient chemical vapor deposition precursor utilized for growing uniform, nanoscale protective coatings and functional layers on electronic substrates