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Hafnium tert-butoxide

Hafnium tert-butoxide

CAS Number: 99409

Molecular Formula: C16H36HfO4

About Hafnium tert-butoxide

Hafnium(IV) tert-butoxide (CAS 2172-02-3) serves as a mission-critical precursor for Atomic Layer Deposition (ALD) in the electronics industry, where maintaining an industry specific purity 98% (electronics industry) is essential for fabricating the high-k dielectric gates required for advanced semiconductor nodes. Tet...

Hafnium tert-butoxide Specifications

CAS Number
99409
Molecular Formula
C16H36HfO4
IUPAC Name
hafnium(4+);2-methylpropan-2-olate
Canonical SMILES
CC(C)(C)O[Hf](OC\(C\)\(C\)C)(OC(C)(C)C)OC(C)(C)C
InChI Key
WZVIPWQGBBCHJP-UHFFFAOYSA-N
Physical appearance
Colorless to pale yellow liquid

Thin Film Deposition Precursor

A mononuclear and volatile chemical precursor primarily utilized for the deposition of hafnium dioxide (HfO2) and other hafnium-doped thin films via vapor deposition techniques, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD)

Semiconductor Manufacturing Component

A high-purity source material used to create films with high dielectric constants (high-k), which are essential for the fabrication of advanced semiconductor devices and non-volatile computer memories

Nanomaterial Synthesis Building Block

A starting reagent employed in the production of HfO2 nanoparticles and nanorods through solution-based routes and sol-gel processes

Nuclear Engineering Material

A precursor for hafnium-based materials used as neutron absorbers or getters in nuclear control rods.

Hafnium tert-butoxide FAQs

Minimum Order Quantity

25 kg (evaluation) · 1 MT (commercial)

Lead Time

3 – 5 weeks estimated

Delivery Terms

FOB*

Packaging

20 L pails, 200 L HDPE drums, 1000 L IBC

US Availability

US Facility Inventory

Documentation

US SDS · COA · TDS · Specification sheet

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California Prop 65*

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