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Gallium arsenide

Gallium arsenide

CAS Number: 1303-00-0

Molecular Formula: AsGa

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About Gallium arsenide

Gallium Arsenide (CAS No: 1303-00-0), identified across technical chemical registers as gallium monoarsenide, 5N electronic grade GaAs, and an III-V compound semiconductor, is undergoing a rapid commercial expansion across the global telecommunications, defence radar, optoelectronics, and space photovoltaics industries...

Synonyms

  • AsGa
  • Arsinidynegallium
  • As-Ga
  • Gallium(III)-arsenid
  • GALLIUM ARSENIDE 1G
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Gallium arsenide Specifications

CAS Number
1303-00-0
Molecular Formula
AsGa
Molecular Weight
144.645 g/mol
IUPAC Name
gallanylidynearsane
Canonical SMILES
[Ga]#[As]
InChI Key
JBRZTFJDHDCESZ-UHFFFAOYSA-N
InChI
InChI=1S/As.Ga
PubChem CID
14770
UNII Code
27FC46GA44
EINECS Number
215-114-8
UN Number
1557
Molecular Weight
144.645 g/mol
Monoisotopic Mass
143.84717 Da
Topological Polar Surface Area
0 Ų
Melting Point
2260 °F
Density (Experimental)
5.3176 g/cm³ Temp: 25°C
GHS Hazard Statements
H350: May cause cancer H360F: May damage fertility H372: Causes damage to organs through prolonged or repeated exposure
Hazard Classes and Categories
Acute toxicity - category 3 Carcinogenicity - category 1B Specific target organ toxicity (repeated exposure) - category 1 Reproductive toxicity - category 1B

5G/6G RF Front-End Modules & Power Amplifiers

A core high-frequency semiconductor substrate for manufacturing high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) used in smartphone and cellular base station power amplifiers

AESA Radar & Military Avionics Communications

A Deployement by defence contractors to fabricate monolithic microwave integrated circuits (MMICs) for X-band and Ku-band active electronically scanned array radars and secure military communication transceivers

VCSEL Lasers & Facial Recognition Sensors

A laser diode active layer for vertical-cavity surface-emitting lasers in 3D sensing arrays, LiDAR systems, and high-speed optical fibre communications

Space-Grade Multi-Junction Solar Cells

A high-efficiency absorber substrate in triple-junction (InGaP/GaAs/Ge) solar cells powering commercial, scientific, and defence satellite constellations

  1. AsGa
  2. Arsinidynegallium
  3. As-Ga
  4. Gallium(III)-arsenid
  5. GALLIUM ARSENIDE 1G

Gallium arsenide FAQs

Minimum Order Quantity

25 kg (pilot) · 1 MT (commercial)

Lead Time

3 – 5 weeks ex-works

Incoterms

FOB · CIF

Packaging

20 L pails, 200 L HDPE drums, 1000 L IBC

Regional Availability

India · EU · Middle East · Southeast Asia

Documentation

SDS · COA · TDS available on request

Compliance & Quality

REACH registered*

GHS/SDS available

ISO 9001:2015 site*

RoHS compliant*

Global sourcing network

Consistent quality & reliability

End-to-end technical support

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