Germanium(IV) ethoxide

CAS Number: 14165-55-0

Molecular Formula: C8H20GeO4

About Germanium(IV) ethoxide

Germanium(IV) ethoxide (CAS 14165-55-0) serves as a critical high purity fine chemicals precursor for the chemical vapor deposition (CVD) of germanium dioxide films, specifically meeting the stringent 99.95% trace metals purity requirements demanded by the United States semiconductor and microelectronics industries. Te...

Germanium(IV) ethoxide Specifications

CAS Number

14165-55-0

Molecular Formula

C8H20GeO4

IUPAC Name

tetraethoxygermane

Canonical SMILES

CCO[Ge](OCC)(OCC)OCC

InChI Key

GXMNGLIMQIPFEB-UHFFFAOYSA-N

CAS Number

14165-55-0

Molecular Formula

C8H20GeO4

IUPAC Name

tetraethoxygermane

Canonical SMILES

CCO[Ge](OCC)(OCC)OCC

InChI Key

GXMNGLIMQIPFEB-UHFFFAOYSA-N

Catalyst

A high-purity organometallic reagent primarily used as a catalyst in various chemical reactions, particularly in the synthesis of germanium-based materials

Deposition Precursor

A versatile starting material for solution-based and vapor-phase deposition processes, including sol-gel synthesis, chemical vapor deposition (CVD), and atomic layer deposition (ALD), to produce high-quality germanium-containing films and nanostructures

Synthesis Intermediate

A critical precursor used in the fabrication of germanium oxide nanostructures, bismuth germanate thin films, and Ge-doped hematite photoanodes for electronics, optics, and semiconductor applications

Sol-gel Intermediate

A functional germanium source employed in the development of optical fibers and photosensitive glass films for advanced industrial and research applications.