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Cadmium arsenide

Cadmium arsenide

CAS Number: 12006-15-4

Molecular Formula: AsCd

Acute ToxicAcute Toxic
IrritantIrritant
Health HazardHealth Hazard
Environmental HazardEnvironmental Hazard

About Cadmium arsenide

Cadmium Arsenide Cd₃As₂ (CAS No: 12006-15-4), identified across technical chemical registers as tricadmium diarsenide, 5N topological grade Cd₃As₂, and an II-V compound semiconductor, is emerging as a critical functional material across the global quantum materials, ultra-high-speed electronics, topological spintronics...

Synonyms

  • Cadmium arsenide (Cd3As2)
  • RefChem:122565
  • EINECS 234-484-1
  • 12006-15-4
  • SCHEMBL4750811

Cadmium arsenide Specifications

CAS Number
12006-15-4
Molecular Formula
AsCd
Molecular Weight
187.34 g/mol
IUPAC Name
arsenic;cadmium
Canonical SMILES
[As].[Cd]
InChI Key
APAWRDGVSNYWSL-UHFFFAOYSA-N
InChI
InChI=1S/As.Cd
PubChem CID
156589061
EINECS Number
234-484-1
HSN No
28429090
Molecular Weight
187.34 g/mol
Monoisotopic Mass
188.824960 Da
Topological Polar Surface Area
0 Ų
Melting Point (Experimental)
716 °C
GHS Hazard Statements
H301+H331 (40.2%): Toxic if swallowed or if inhaled H301 (100%): Toxic if swallowed H312 (41.2%): Harmful in contact with skin H330 (59.8%): Fatal if inhaled H331 (40.2%): Toxic if inhaled H350 (56.7%): May cause cancer H400 (100%): Very toxic to aquatic life H410 (100%): Very toxic to aquatic life with long lasting effects
Hazard Classes and Categories
Acute Tox. 3 (100%) Acute Tox. 4 (41.2%) Acute Tox. 2 (59.8%) Acute Tox. 3 (40.2%) Carc. 1B (56.7%) Aquatic Acute 1 (100%) Aquatic Chronic 1 (100%)

3D Dirac Semimetal & Quantum Computing Devices

A primary topological material for developing fault-tolerant quantum computing architectures, Majorana fermion channels, and ultra-high-mobility spintronic logic gates.

Broadband & Terahertz Photodetectors

A primary choice by optoelectronic device fabricators to manufacture ultra-fast photodetectors operating across the mid-infrared to terahertz spectral ranges

High-Frequency & Ultra-Fast Transistors

An active utilisation as a channel layer material in high-speed, low-power ballistically transportive field-effect transistors (FETs) and sub-terahertz communications hardware

Magnetoelectronic & Hall Effect Sensors

A high-mobility functional material for ultra-sensitive magnetic field sensors, magnetoresistive memory cells, and precision hall probes

  1. Cadmium arsenide (Cd3As2)
  2. RefChem:122565
  3. EINECS 234-484-1
  4. 12006-15-4
  5. SCHEMBL4750811

Cadmium arsenide FAQs

Minimum Order Quantity

25 kg (pilot) · 1 MT (commercial)

Lead Time

3 – 5 weeks ex-works

Incoterms

FOB · CIF

Packaging

20 L pails, 200 L HDPE drums, 1000 L IBC

Regional Availability

India · EU · Middle East · Southeast Asia

Documentation

SDS · COA · TDS available on request

Compliance & Quality

REACH registered*

GHS/SDS available

ISO 9001:2015 site*

RoHS compliant*

Global sourcing network

Consistent quality & reliability

End-to-end technical support

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