Niobium(V) ethoxide

Niobium(V) ethoxide

CAS Number
3236-82-6
Molecular Formula
C10H25NbO5

About Niobium(V) ethoxide

Niobium(V) ethoxide CAS 3236-82-6 serves as a high purity fine chemicals precursor for the electronics and semiconductor industries, particularly in the atomic layer deposition of niobium oxide thin films, where recent trends show a surge in custom synthesis services to meet stringent dielectric specifications. Pentaet...

Niobium(V) ethoxide Specifications

CAS Number
3236-82-6
Molecular Formula
C10H25NbO5
Molecular Weight
318.21 g/mol
IUPAC Name
pentaethoxyniobium
Canonical SMILES
CCO[Nb](OCC)(OCC)(OCC)OCC
InChI Key
ZTILUDNICMILKJ-UHFFFAOYSA-N
Molecular Weight
318.21 g/mol

Synthetic Precursor

A synthetic precursor for niobium oxides including Nb2O5, NaNbO3, and TiNb2O7

Chemical Precursor

A precursor in atomic layer deposition, chemical vapor deposition, and metal-organic chemical vapor deposition of niobium oxide thin films

Dopant

A dopant to prepare Nb-doped TiO2 photoanodes for dye-sensitized solar cells to enhance electron injection and transfer ability

Material Precursor

A precursor for the sol-gel processing of materials containing niobium oxides and mixed metal oxides used in coatings, sensors, and dielectric applications

Catalyst Precursor

A precursor to synthesize niobium-based catalysts for polymerization, oxidation, and hydrogenation reactions

Niobium(V) ethoxide FAQs

Minimum Order Quantity

25 kg (pilot) · 1 MT (commercial)

Lead Time

3 – 5 weeks ex-works

Incoterms

FOB · CIF

Packaging

20 L pails, 200 L HDPE drums, 1000 L IBC

Regional Availability

India · EU · Middle East · Southeast Asia

Documentation

SDS · COA · TDS available on request

Compliance & Quality

REACH registered*

GHS/SDS available

ISO 9001:2015 site*

RoHS compliant*

Global sourcing network

Consistent quality & reliability

End-to-end technical support

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